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IRFI1310NPBF PDF File ( Datasheet )
Infineon
IRFI1310NPBF
Single N-Channel 100 V 0.036 Ohm 120 nC HEXFET® Power Mosfet - TO-220-3FP
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Avnet | 1,500 | Visit Site | |||
| Newark | 1,345 | 2.73 | Visit Site | ||
| Rochester Electronics | 30 | Visit Site | |||
| Arrow Electronics | 12,927 | 1.1578 | Visit Site | ||
| DigiKey | 3,453 | 3.17 | Visit Site | ||
| Mouser | 5,063 | 2.71 | Visit Site | ||
| Microchip USA | 219 | Visit Site | |||
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| IRFI1310NPBF Description |
| Power MOSFET, Transistor
Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated Lead-Free
Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient a
 Infineon |
| Power MOSFET, Transistor
l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated l Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient
 International Rectifier |
| Related Part Number |
IRFI3205PBF | IRFP150R IRF8910PBF-1 | IRFP351 IRF6217PBF-1 | IRFW614A |
| DataSheet.es | 2020 | Contacto |