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IRF830I-HF PDF File ( Datasheet )

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IRF830I-HF-VB
650V, 4A, Rds(on), 2560M¦¸@10V, 20VGS(¡ÀV), 3.8VTH(V) N Mosfet, Plannar , TO220F
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IRF830I-HF Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

IRF830I-HF Halogen-Free Product Advanced Power Electronics Corp. Ease of Paralleling Fast Switching Characteristic Simple Drive Requirement RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 500V 1.5 4.5A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. G D S

Advanced Power Electronics
Advanced Power Electronics




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