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IRF820B PDF File ( Datasheet )

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IRF820B
Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

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IRF820B Description
500V N-Channel MOSFET

IRF820B, IRFS820B November 2001 IRF820B, IRFS820B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power suppl
Fairchild Semiconductor
Fairchild Semiconductor



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