IRF7756PBF PDF File ( Datasheet )

l Ultra Low On-Resistance l Dual P-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.2mm) l Available in Tape & Reel l Lead-Free VDSS -12V PD-96017A IRF7756PbF HEXFET® Power MOSFET RDS(on) max 0.040@VGS = -4.5V 0.058@VGS = -2.5V 0.087@VGS = -1.8V ID ±4.3A ±3.4A ±2.2A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device d