IRF710A PDF File ( Datasheet )

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF710A ·FEATURES ·Avalanche Rugged Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Low RDS(ON) : 2.815 Ω (Typ.) ·DESCRITION ·designed for applications such as switching regulators, switching convertors, motor drivers,relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated di

$GYDQFHG 3RZHU 026)(7 FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) @ VDS = 400V Low RDS(ON): 2.815Ω (Typ.) IRF710A BVDSS = 400 V RDS(on) = 3.6Ω ID = 2 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Con