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IRF610B PDF File ( Datasheet )

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IRF610B
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...

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IRF610B Description
200V N-Channel MOSFET

IRF610B, IRFS610B IRF610B, IRFS610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC, DC converters, switch mo
Fairchild Semiconductor
Fairchild Semiconductor



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