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IRF5Y3315CM PDF File ( Datasheet )

International Rectifier
IRF5Y3315CM
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
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IRF5Y3315CM Description
POWER MOSFET N-CHANNEL(Vdss=150V/ Rds(on)=0.085ohm/ Id=18A*)

PD - 94268 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y3315CM 150V, N-CHANNEL Product Summary Part Number IRF5Y3315CM BVDSS 150V RDS(on) 0.085Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an e

International Rectifier
International Rectifier




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