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IRF4905 PDF File ( Datasheet )
Infineon
IRF4905PBF
Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.02 Ohm; Id -74A; TO-220AB; Pd 200W; Vgs +/-20V
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| IRF4905 Description |
| P-Channel MOSFET Transistor
INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
IRF4905
FEATURES ·Advanced Process Technology ·Ultra Low On-Resistance ·Dynamic dv, dt Rating ·175°C Operating Temperature ·Fast Switching ·P-Channel ·Fully Avalanche Rated
DESCRIPTION ·This benefit, combined with the fast switching speed and
ruggedized device .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
-55 ±20
V V
 Inchange Semiconductor |
| Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
PD - 9.1280C
IRF4905
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv, dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description
l l
D
VDSS = -55V
G S
RDS(on) = 0.02Ω ID = -74A
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig
 International Rectifier |
| Related Part Number |
IRFS630A | IRFP340R IRF621 | IRFH7885PBF IRF822FI | IRF60DM206 |
| DataSheet.es | 2020 | Contacto |