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IRF430 PDF File ( Datasheet )

International Rectifier
IRF430
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
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IRF430 Description
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF430 DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged ·low drive requirements ·ease of paralleling APPLICATIONS ·high speed applications such as Switching power supplies,AC and DCmotor controls relay and solenoid driver. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) Gate-Source Voltage 500 ±20 V V Drain Current-con

Inchange Semiconductor
Inchange Semiconductor
N-CHANNEL POWER MOSFETS

Samsung semiconductor
Samsung semiconductor




Related Part Number

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