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IRF342 PDF File ( Datasheet )

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IRF342
Power Field-Effect Transistor, 8.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
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IRF342 Description
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF342 DESCRIPTION ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speeds ·IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature ·Rugged APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot T

Inchange Semiconductor
Inchange Semiconductor
N-Channel Power MOSFETs

IRF340-343, IRF740-743 T-39-13 MTM8N35, 8N40 N-Channel Power MOSFETs 10A, 350V, 400V Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. - VGS Rated at ±20V - Silicon Gate for Fast Switching Speeds - IDSS, VDS(on), SOA and VGS(th) Specified at Elevated Temperature - Rugged TO-204AA IRF340 IRF341 IRF342 IRF343

ART CHIP
ART CHIP




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