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IRF3205SPBF PDF File ( Datasheet )

Infineon
IRF3205SPBF
MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 8 Milliohms; ID 110A; D2Pak; PD 200W; VGS +/-20V

PDF Datasheet
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IRF3205SPBF Description
Power MOSFET, Transistor

PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv, dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 8.0mΩ G S ID = 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed an
International Rectifier
International Rectifier



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