DataSheet.es    

IDW10G120C5B PDF File ( Datasheet )

Infineon
IDW10G120C5BFKSA1
Silicon Carbide Schottky Diode, thinQ, Dual Common Cathode, 1.2 kV, 34 A, 57 nC, TO-247
DistributorStock110100Link
Newark608.715.854.84Visit Site
Rutronik120Visit Site
Rochester Electronics5872.24Visit Site
Arrow Electronics8255.50523.30272.7793Visit Site
DigiKey2017.36Visit Site
Mouser566.313.813Visit Site
Microchip USA179Visit Site
Powered by Octopart



 



IDW10G120C5B Description
Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode Final Datasheet Rev. 2.0 2014-06-10 Industrial Power Control IDW10G120C5B 5th Generation thinQ!™ 1200 V SiC Schottky Diode thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material - Silicon Carbide No reverse recovery current , No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribut

Infineon
Infineon




Related Part Number

IDW30E65D1  |  IDW30E60  

IDW12G65C5  |  IDW24G65C5B  

IDW40E65D1  |  IDW75E60  



DataSheet.es    |   2020   |  Contacto