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| IDW10G120C5B Description |
| Silicon Carbide Schottky Diode
Silicon Carbide Schottky Diode
IDW10G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2.0 2014-06-10
Industrial Power Control
IDW10G120C5B
5th Generation thinQ!™ 1200 V SiC Schottky Diode
thinQ!TM SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide No reverse recovery current , No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribut
Infineon |
| Related Part Number |
IDW30E65D1 | IDW30E60 IDW12G65C5 | IDW24G65C5B IDW40E65D1 | IDW75E60 |
| DataSheet.es | 2020 | Contacto |