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IDT71V124SA12Y PDF File ( Datasheet )

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IDT71V124SA12Y
Asynchronous J BEND 3-STATE 2007 (Memory Format) Memory 70C 3.6V 1Mb 130mA
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Microchip USA285Visit Site
Worldway Electronics11,3801.04721.0274Visit Site
AAA CHIPS1,1291.7426331.4294181.385528Visit Site
SHENGYU ELECTRONICS12,7370.9540.93490.91Visit Site
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IDT71V124SA12Y Description
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout x x IDT71V124SA Features 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power, GND) for reduced noise Equal access and cycle times Commercial: 10, 12, 15, 20ns Industrial: 10, 12, 15, 20ns One Chip Select plus one Output Enable pin Inputs and outputs are LVTTL-compatible Single 3.3V supply Low power consumption via chip deselect Available in a 32-pin 300- and 400-mil Plastic SOJ, and 32-pi

Integrated Device Technology
Integrated Device Technology
3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout

3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout x x IDT71V124SA Features 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power, GND) for reduced noise Equal access and cycle times Commercial: 10, 12, 15, 20ns Industrial: 10, 12, 15, 20ns One Chip Select plus one Output Enable pin Inputs and outputs are LVTTL-compatible Single 3.3V supply Low power consumption via chip deselect Available in a 32-pin 300- and 400-mil Plastic SOJ, and 32-pi

Integrated Device Technology
Integrated Device Technology




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