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| IDH08S120 Description |
| Schottky Diode
IDH08S120
thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Optimized for high temperature operation
Lowest Figure
Product Summary VDC QC IF; TC< 130 °C 1200 600 3.2 27 7.5 3 V nC A
PG-TO220-2
of Merit QC,
Infineon Technologies |
| Related Part Number |
IDH12G65C5 | IDH15S120 IDH03SG60C | IDH06SG60C IDH10SG60C | IDH-20PK1-Sx |
| DataSheet.es | 2020 | Contacto |