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| IDD12SG60C Description |
| Schottky Diode
3rd Generation thinQ!TM SiC Schottky Diode
Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark
No reverse recovery , No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 20mA2) Optimized for high temperature operation Lowest Figure of Merit QC, IF
Product Summary VDC QC IF; TC< 130 °C
Infineon Technologies |
| Related Part Number |
IDD10SG60C | IDD03E60 IDD06SG60C | IDD04SG60C IDD05SG60C | IDD10U |
| DataSheet.es | 2020 | Contacto |