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IDD12SG60C PDF File ( Datasheet )

Infineon
IDD12SG60C
Rectifier Diode, Schottky, 1 Phase, 1 Element, 12A, 600V V(RRM), Silicon Carbide, TO-252
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IDD12SG60C Description
Schottky Diode

3rd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery , No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 20mA2) Optimized for high temperature operation Lowest Figure of Merit QC, IF Product Summary VDC QC IF; TC< 130 °C

Infineon Technologies
Infineon Technologies




Related Part Number

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