IDC06S60C PDF File ( Datasheet )

IDC06S60C 2nd generation thinQ!TM SiC Schottky Diode FEATURES: Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: SMPS, PFC, snubber C A Chip Type IDC06S60C VBR 600V IF 6A Die Size 1.45 x 1.354 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Anode pad size Area total , active Thickness Wafer size Flat posi

IDC06S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: SMPS, PFC, snubber C A Chip Type IDC06S60CE VBR 600V IF 6A Die Size 1.45 x 1.354 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips