HCP65R360S PDF File ( Datasheet )

HCP65R360S HCP65R360S 650V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)  7\S#9GS=10V 100% Avalanche Tested November 2014 BVDSS = 650 V RDS(on) typ = 0.32 ID = 11 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise sp