HAT1016R PDF File ( Datasheet )

HAT1016R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-471 D (Z) 5th. Edition February 1999 Features Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1016R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1