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HAF2012S PDF File ( Datasheet )

Renesas
HAF2012S
Renesas Silicon N Channel MOS FET Series Power Switching
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HAF2012S Description
Silicon N Channel MOS FET Series Power Switching

HAF2012(L), HAF2012(S) Silicon N Channel MOS FET Series Power Switching REJ03G1139-0400 Rev.4.00 Jul 13, 2007 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features Logic level operation (4 to 6 V Gate dri

Renesas Technology
Renesas Technology




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