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| HAF2012S Description |
| Silicon N Channel MOS FET Series Power Switching
HAF2012(L), HAF2012(S)
Silicon N Channel MOS FET Series Power Switching
REJ03G1139-0400 Rev.4.00 Jul 13, 2007
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
Features
Logic level operation (4 to 6 V Gate dri
Renesas Technology |
| Related Part Number |
HAF2017 | HAF2027L HAF2021L | HAF2021S HAF2017L | HAF2027S |
| DataSheet.es | 2020 | Contacto |