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HAF1002S PDF File ( Datasheet )

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HAF1002S
Renesas Silicon P Channel MOS FET Series Power Switching
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HAF1002S Description
Silicon P Channel MOS FET Series Power Switching

HAF1002(L), HAF1002(S) Silicon P Channel MOS FET Series Power Switching ADE-208-586 (Z) 1st. Edition October 1997 Features This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Logic level operation ( 4 to 6 V Gate drive) High en

Hitachi Semiconductor
Hitachi Semiconductor




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