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| HAF1002 Description |
| Silicon P Channel MOS FET Series Power Switching
HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Logic level operation ( 4 to 6 V Gate drive) High en
Hitachi Semiconductor |
| Silicon P Channel MOS FET Series Power Switching
HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Logic level operation ( 4 to 6 V Gate drive) High en
Hitachi Semiconductor |
| Related Part Number |
HAF2021L | HAF2017 HAF2027L | HAF2021S HAF2017L | HAF2027S |
| DataSheet.es | 2020 | Contacto |