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HAF1001 PDF File ( Datasheet )

VBsemi
HAF1001-VB
P¡ªchannel, -60V, -40A, Rds(on), 62M¦¸@10V, 74M¦¸@4.5V, 20VGS(¡ÀV), -1.3VTH(V) , TO220
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HAF1001 Description
Silicon P Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability

HAF1001 Silicon P Channel MOS FET Series Power Switching , Over Temperature Shut down Capability ADE-208-583 A (Z) 2nd Edition October 1997 Features This FET has the over temperature shut down capability sensing to the junction temperature. This FET has the built in over temperature shut down circuit in the gate area. And this circuit operation to shut down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Logic level operation ( 4 t

Hitachi Semiconductor
Hitachi Semiconductor




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