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| GTT2623 Description |
| P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006, 03, 28 REVISED DATE :
GTT2623
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 170m -2.0A
The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT2623 is universally used for all commercial-industrial applications.
Description
*Low Gate Charge *Low On-resistance
Features
Package Dimensions
REF. A A1 A2 c D E E1
Millimeter Min. Max
GTM |
| Related Part Number |
GTTY43SP7F1R0 | GTT3455 GTT2605 | GTT8209E GTT2602 | GTT3585 |
| DataSheet.es | 2020 | Contacto |