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GTC9922E PDF File ( Datasheet )




 



GTC9922E Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2007, 01, 25 REVISED DATE : GTC9922E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 15m 6.8A The GTC9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC, DC battery application *Surface mount package Description Features Package Dimensions REF. A A1 b c D Millimeter Min. 0.05 0.19 0.0

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