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| GTC9922E Description |
| N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2007, 01, 25 REVISED DATE :
GTC9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 15m 6.8A
The GTC9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC, DC battery application *Surface mount package
Description
Features
Package Dimensions
REF. A A1 b c D
Millimeter Min.
0.05 0.19 0.0
GTM |
| Related Part Number |
GTCX255251M5R02 | GTCX255551M5R02 GTCX255141M5R02 | GTCX255401M5R02 GTC220E | GTC9926 |
| DataSheet.es | 2020 | Contacto |