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FSTJ9055R PDF File ( Datasheet )

Fairchild Semiconductor
FSTJ9055R4
Power Field-Effect Transistor, 62A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,...
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FSTJ9055R Description
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSTJ9055D, FSTJ9055R TM Data Sheet June 2000 File Number 4756.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessar

Intersil Corporation
Intersil Corporation
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

FSTJ9055D, FSTJ9055R TM Data Sheet June 2000 File Number 4756.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessar

Intersil Corporation
Intersil Corporation




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