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| FSS9130R3 Description |
| 6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
FSS9130D, FSS9130R
June 1998
6A, -100V, 0.660 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to
Intersil Corporation |
| Related Part Number |
FSS275 | FSS923A0R1 FSS430R | FSS234R1 FSS132 | FSS9130R1 |
| DataSheet.es | 2020 | Contacto |