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| FSS430D3 Description |
| 3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSS430D, FSS430R
June 1998
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to hars
Intersil Corporation |
| Related Part Number |
FSS275 | FSS134 FSS913A0D | FSS23A0R4 FSS13A0R3 | FSS9230D1 |
| DataSheet.es | 2020 | Contacto |