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| FSJ260R4 Description |
| 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSJ163D, FSJ163R
Data Sheet June 1999 File Number
4751
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space
Intersil Corporation |
| 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSJ163D, FSJ163R
Data Sheet June 1999 File Number
4751
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs speci cally designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space
Intersil Corporation |
| Related Part Number |
FSJ9260D | FSJ260D FSJ264D3 | FSJ9055R FSJ055D3 | FSJ9160R |
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