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FQU5N60C PDF File ( Datasheet )

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FQU5N60CTU
Power Mosfet, N-channel, Qfet®, 600 V, 2.8 A, 2.5 Ω, Ipak
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FQU5N60C Description
600V N-Channel MOSFET

FQD5N60C , FQU5N60C N-Channel MOSFET March 2013 N-Channel QFET MOSFET 600 V, 2.8 A, 2.5 Ω Description FQD5N60C , FQU5N60C Features 2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A Low Gate Charge (Typ. 15 nC) Low Crss (Typ. 6.5 pF) 100% Avalanche Tested RoHS compliant This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

Fairchild Semiconductor
Fairchild Semiconductor




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