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| FQU5N60C Description |
| 600V N-Channel MOSFET
FQD5N60C , FQU5N60C N-Channel MOSFET
March 2013
N-Channel QFET MOSFET
600 V, 2.8 A, 2.5 Ω Description
FQD5N60C , FQU5N60C
Features
2.8 A, 600 V, RDS(on) = 2.5 Ω (Max) @VGS = 10 V, ID = 1.4 A Low Gate Charge (Typ. 15 nC) Low Crss (Typ. 6.5 pF) 100% Avalanche Tested RoHS compliant
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to
Fairchild Semiconductor |
| Related Part Number |
FQU4N60 | FQU5N20L FQU2N40 | FQU10N20L FQU6N15 | FQU2P40 |
| DataSheet.es | 2020 | Contacto |