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FQU4N20L PDF File ( Datasheet )

Fairchild Semiconductor
FQU4N20LTU
Power Field-Effect Transistor, 3.2A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,...
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FQU4N20L Description
200V LOGIC N-Channel MOSFET

FQD4N20L , FQU4N20L December 2000 QFET FQD4N20L , FQU4N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency swit

Fairchild Semiconductor
Fairchild Semiconductor




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