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| FQT1N80TF Description |
| N-Channel MOSFET
FQT1N80TF_WS N-Channel MOSFET
August 2011
QFET
FQT1N80TF_WS
N-Channel MOSFET
800V, 0.2A, 20Ω Features
RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A Low gate charge ( Typ. 5.5nC) Low Crss ( Typ. 2.7pF) Fast switching 100% avalanche tested Improved dv, dt capability RoHS compliant
®
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail
Fairchild Semiconductor |
| Related Part Number |
FQT1N80 | FQT7N10 FQT4N20L | FQT2P25 FQT7N10L | FQT13N06 |
| DataSheet.es | 2020 | Contacto |