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FQT1N80TF PDF File ( Datasheet )

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FQT1N80TF-WS
Power Mosfet, N-channel, Qfet®, 800 V, 0.2 A, 20 Ω, SOT-223
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FQT1N80TF Description
N-Channel MOSFET

FQT1N80TF_WS N-Channel MOSFET August 2011 QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features RDS(on) = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A Low gate charge ( Typ. 5.5nC) Low Crss ( Typ. 2.7pF) Fast switching 100% avalanche tested Improved dv, dt capability RoHS compliant ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tail

Fairchild Semiconductor
Fairchild Semiconductor




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