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FQPF8N60C PDF File ( Datasheet )



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FQPF8N60C
Power Mosfet, N-channel, Qfet®, 600 V, 7.5 A, 1.2 Ω, TO-220F

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FQPF8N60C Description
600V N-Channel MOSFET

FQP8N60C, FQPF8N60C QFET FQP8N60C, FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power su
Fairchild Semiconductor
Fairchild Semiconductor
600V N-Channel MOSFET

FQPF8N60CF 600V N-Channel MOSFET February 2006 FRFET FQPF8N60CF 600V N-Channel MOSFET Features 6.26A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv, dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-st
Fairchild Semiconductor
Fairchild Semiconductor



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