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| FQPF10N60C Description |
| 600V N-Channel MOSFET
FQP10N60C , FQPF10N60C N-Channel QFET® MOSFET
November 2013
FQP10N60C , FQPF10N60C
N-Channel QFET® MOSFET
600 V, 9.5 A, 730 mΩ
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devi
Fairchild Semiconductor |
| N-Channel MOSFET
FQP10N60CF , FQPF10N60CF 600V N-Channel MOSFET
February 2007
FRFET
FQP10N60CF , FQPF10N60CF
600V N-Channel MOSFET
Features
9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv, dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t
Fairchild Semiconductor |
| Related Part Number |
FQPF12N65C | FQPF6N80CT FQPF10N60 | FQP33N10 FQP12N65 | FQPF2N80YDTU |
| DataSheet.es | 2020 | Contacto |