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FQPF10N60C PDF File ( Datasheet )

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FQPF10N60C
Power MOSFET, N-Channel, QFET®, 600 V, 9.5 A, 730 mΩ, TO-220F
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FQPF10N60C Description
600V N-Channel MOSFET

FQP10N60C , FQPF10N60C N-Channel QFET® MOSFET November 2013 FQP10N60C , FQPF10N60C N-Channel QFET® MOSFET 600 V, 9.5 A, 730 mΩ Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and commutation mode. These devi

Fairchild Semiconductor
Fairchild Semiconductor
N-Channel MOSFET

FQP10N60CF , FQPF10N60CF 600V N-Channel MOSFET February 2007 FRFET FQP10N60CF , FQPF10N60CF 600V N-Channel MOSFET Features 9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 18 pF) Fast switching 100% avalanche tested Improved dv, dt capability TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially t

Fairchild Semiconductor
Fairchild Semiconductor




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FQP12N65  |  FQPF2N80YDTU  



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