FQP5N60 PDF File ( Datasheet )

FQP5N60 April 2000 QFET FQP5N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Fea

FQP5N60 阻特性 名 芯片 管 阻 芯片 境的 阻 符 RθJC RθJA SVD5N60AT 1.25 62.5 SVD5N60AF 3.79 62.5 位 °C, W °C, W 特性 (除非特殊 明，TC=25°C) 漏源 穿 漏源漏 流 源漏 流 通 阻 入 容 出 容 反向 容 延 上升 延 下降 荷量 -源 荷量 -漏 荷量 符 BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VGS=10V (Note 3,4) (Note 3,4) VDS=480V,ID=4.4A, 件 VGS=0V, ID=250 A VDS=60