FQP12N65 PDF File ( Datasheet )

FQP12N65, FQPF12N65 650V, 12A N-Channel MOSFET General Description The FQP12N65 & FQPF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Te

限 (除非特殊 明，TC=25°C) 名 漏源 源 漏 流 漏 流 TC=25°C TC=100°C 耗散功率（TC=25°C） - 大于 25°C 每 氏度 少 雪崩能量（注 1） 工作 范 存 度范 符 VDS VGS ID IDM PD EAS TJ Tstg 范 SVD12N65T SVD12N65F 650 ±30 12 7.6 48 225 51 1.8 0.41 1074 -55～+150 -55～+150 阻特性 名 芯片 管 阻 芯片 境的 阻 符 RθJC RθJA 范 SVD12N65T SVD12N65F 0.56 2.44 62.5 120 性 (除非特殊