|
| FQI3N60 Description |
| 600V N-Channel MOSFET
FQB3N60 , FQI3N60
April 2000
QFET
FQB3N60 , FQI3N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode
Fairchild Semiconductor |
| Related Part Number |
FQI140N03L | FQI50N06 FQI2N90 | FQI14N15 FQI7N20L | FQI5N30 |
| DataSheet.es | 2020 | Contacto |