DataSheet.es    

FQI3N60 PDF File ( Datasheet )




 



FQI3N60 Description
600V N-Channel MOSFET

FQB3N60 , FQI3N60 April 2000 QFET FQB3N60 , FQI3N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode

Fairchild Semiconductor
Fairchild Semiconductor




Related Part Number

FQI140N03L  |  FQI50N06  

FQI2N90  |  FQI14N15  

FQI7N20L  |  FQI5N30  



DataSheet.es    |   2020   |  Contacto