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| FQD45N03L Description |
| N-Channel Logic Level PWM Optimized Power MOSFET
FQD45N03L
March 2004
FQD45N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. Optimized for switching applications, this device improves the overall efficiency of DC, DC converters and allows operation to higher switching frequencies.
Features
Fast switching rDS(ON) = 0.018Ω (Typ), VGS = 10V rDS(ON) = 0.028Ω (Typ), VGS = 5V Qg (Typ) = 9nC, VGS = 5
Fairchild Semiconductor |
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| DataSheet.es | 2020 | Contacto |