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| FQB9N50CF Description |
| N-Channel MOSFET
FQB9N50CF 500V N-Channel MOSFET
October 2006
FRFET
FQB9N50CF
500V N-Channel MOSFET
Features
9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V Low gate charge ( typical 28nC) Low Crss ( typical 24pF) Fast switching 100% avalanche tested Improved dv, dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resi
Fairchild Semiconductor |
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FQB140N03L | FQB34P10 FQB12N65 | FQB3N60C FQB22P10TM_F085 | FQB7P20 |
| DataSheet.es | 2020 | Contacto |