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FQB9N50C PDF File ( Datasheet )
Datasheet| Distributor | Stock | 1 | Link | ||
|---|---|---|---|---|---|
| Rochester Electronics | 9,738 | Visit Site | |||
| Verical | 1,186 | Visit Site | |||
| Win Source | 13,000 | Visit Site | |||
| Worldway Electronics | 18,663 | Visit Site | |||
| Bettlink | 7,800 | 1.66921 | Visit Site | ||
| SHENGYU ELECTRONICS | 7,481 | 0.3859 | Visit Site | ||
| Fly-Wing Technology | 1,535 | 0.9152 | Visit Site | ||
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| FQB9N50C Description |
| N-Channel MOSFET
FQB9N50C, FQI9N50C
QFET
FQB9N50C, FQI9N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supp
 Fairchild Semiconductor |
| N-Channel MOSFET
FQB9N50CF 500V N-Channel MOSFET
October 2006
FRFET
FQB9N50CF
500V N-Channel MOSFET
Features
9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V Low gate charge ( typical 28nC) Low Crss ( typical 24pF) Fast switching 100% avalanche tested Improved dv, dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resi
Fairchild Semiconductor |
| Related Part Number |
FQB12N65 | FQB140N03L FQB34P10 | FQB6N40 FQB4N80 | FQB2P40 |
| DataSheet.es | 2020 | Contacto |