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FQB12N20L PDF File ( Datasheet )

Fairchild Semiconductor
FQB12N20LTM
Power Field-Effect Transistor, 11.6A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor...
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FQB12N20L Description
200V LOGIC N-Channel MOSFET

FQB12N20L , FQI12N20L February 2001 FQB12N20L , FQI12N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

Fairchild Semiconductor
Fairchild Semiconductor




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