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FQAF10N80 PDF File ( Datasheet )

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FQAF10N80
Power Field-Effect Transistor, 6.7A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

PDF Datasheet
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FQAF10N80 Description
800V N-Channel MOSFET

FQAF10N80 QFET FQAF10N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features

Fairchild Semiconductor
Fairchild Semiconductor



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