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FQA8N90C_F109 PDF File ( Datasheet )

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FQA8N90C-F109
N-channel Power Mosfet, Qfet®, 900 V, 8.0 A, 1.9 Ω, TO-3P

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FQA8N90C_F109 Description
N-Channel QFET MOSFET

FQA8N90C_F109 N-Channel QFET® MOSFET FQA8N90C_F109 N-Channel QFET® MOSFET 900 V, 8 A, 1.9 Ω Features 8 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 4 V Low Gate Charge (Typ. 35 nC) Low Crss (Typ. 12 pF) 100% Avalanche Tested RoHS Compliant May 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state

Fairchild Semiconductor
Fairchild Semiconductor



Related Part Number

FQA17N40  |  FQA8N100C  

FQAF11N90C  |  FQA13N80_F109  

FQA62N25C  |  FQA11N90C_F109  



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