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FGH40T65SPD PDF File ( Datasheet )

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FGH40T65SPD-F085
Insulated Gate Bipolar Transisto / Igbt Npt 650 V 80 A 267 W Through Hole TO-247

PDF Datasheet
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FGH40T65SPD Description
IGBT, Insulated Gate Bipolar Transistor

FGH40T65SPD 650 V, 40 A Field Stop Trench IGBT FGH40T65SPD 650 V, 40 A Field Stop Trench IGBT October 2013 Features Maximum Junction Temperature : TJ = 175oC Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage: VCE(sat) = 1.85 V ( Typ.) @ IC = 40 A High Input Impedance Fast Switching Tighten Parameter Distribution RoHS Compliant Short Circuit Ruggedness > 5 us @ 25oC E C G General Description Using novel field stop IGBT techno
Fairchild Semiconductor
Fairchild Semiconductor



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