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| FGD5T120SH Description |
| IGBT, Insulated Gate Bipolar Transistor
FGD5T120SH 1200 V, 5 A FS Trench IGBT
FGD5T120SH
1200 V, 5 A FS Trench IGBT
Features
FS Trench Technology, Positive Temperature Coefficient High Speed Switching Low Saturation Voltage: VCE(sat) =2.9 V @ IC = 5 A 100% of the Parts tested for ILM(1) High Input Impedance RoHS Compliant
Applications
Inrush current limitation
Lighting
Home appliances
November 2015
General Description
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer
Fairchild Semiconductor |
| Related Part Number |
FGD12-302 | FGD3440G2_F085 FGD12-502 | FGD3040G2_F085 FGD13-302 | FGD3N60UNDF |
| DataSheet.es | 2020 | Contacto |