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| FDW2506 Description |
| Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2506P
October 2000
FDW2506P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
Features
5.3 A, 20 V, RDS(ON) = 0.022 Ω @ VGS = 4.5 V. RDS(ON) = 0.033 Ω @ VGS = 2.5V.
Extended VGSS range (±12V) for battery applications Low gate ch
Fairchild Semiconductor |
| Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDW2506P
October 2000
FDW2506P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
Features
5.3 A, 20 V, RDS(ON) = 0.022 Ω @ VGS = 4.5 V. RDS(ON) = 0.033 Ω @ VGS = 2.5V.
Extended VGSS range (±12V) for battery applications Low gate ch
Fairchild Semiconductor |
| Related Part Number |
FDW258P | FDW2502 FDW2506P | FDW2510NZ FDW2521C | FDW6923 |
| DataSheet.es | 2020 | Contacto |