DataSheet.es    

FDV303N PDF File ( Datasheet )

onsemi
FDV303N
Transistor, Digital Fet, N-channel, Mosfet, 25V, 0.68A, 0.35W, SOT-23

PDF Datasheet
DistributorStock110100Link
Future Electronics11,313,000Visit Site
Avnet639,000Visit Site
Newark56,4910.0370.037Visit Site
Master Electronics165,000Visit Site
Onlinecomponents.com165,000Visit Site
Rochester Electronics13,8720.0424Visit Site
Verical12,299Visit Site
Powered by Octopart



 



FDV303N Description
N-Channel Digital FET

FDV303N Digital FET, N-Channel General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC, DC

Fairchild Semiconductor
Fairchild Semiconductor



Related Part Number

FDVE1040  |  FDV0618  

FDV0620  |  FDVE0630  

FDV0840  |  FDVE0640  



DataSheet.es    |   2020   |  Contacto