FDS9934C PDF File ( Datasheet )

FDS9934C March 2006 FDS9934C Complementary These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features Q1: 6.5 A, 20 V. RDS(ON) = 30 mΩ @