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FDS8842NZ PDF File ( Datasheet )

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FDS8842NZ
N-Channel PowerTrench® MOSFET 40V, 14.9A, 7.0mΩ

PDF Datasheet
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FDS8842NZ Description
N-Channel MOSFET

FDS8842NZ N-Channel Power Trench® MOSFET February 2009 FDS8842NZ N-Channel PowerTrench® MOSFET 40 V, 14.9 A, 7.0 mΩ Features Max rDS(on) = 7.0 mΩ at VGS = 10 V, ID = 14.9 A Max rDS(on) = 11.6 mΩ at VGS = 4.5 V, ID = 11.6 A HBM ESD protection level of 4.4 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching High power and current handling capability Termination is Lead-free and RoHS Compliant General Description The FDS8842NZ has been
Fairchild Semiconductor
Fairchild Semiconductor



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