DataSheet.es    

FDS86141 PDF File ( Datasheet )

onsemi
FDS86141
N-Channel Power Trench® MOSFET 100V, 7A, 23mΩ

PDF Datasheet
DistributorStock110100Link
Avnet22,500Visit Site
Newark2,3552.651.91.41Visit Site
Rochester Electronics2,8501.33Visit Site
Verical8,865Visit Site
Arrow Electronics8,8650.8717Visit Site
DigiKey4,5113.372.1931.52Visit Site
Flip Electronics22,500Visit Site
Powered by Octopart



 



FDS86141 Description
MOSFET, Transistor

FDS86141 N-Channel Power Trench® MOSFET May 2015 FDS86141 N-Channel Power Trench® MOSFET 100 V, 7 A, 23 mΩ Features General Description Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7 A Max rDS(on) = 36 mΩ at VGS = 6 V, ID = 5.5 A High performance trench technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistan
Fairchild Semiconductor
Fairchild Semiconductor



Related Part Number

FDSD0630W  |  FDS8978  

FDS8935  |  FDSD0512  

FDS6994S  |  FDS6910  



DataSheet.es    |   2020   |  Contacto