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FDR4410 PDF File ( Datasheet )

Fairchild Semiconductor
FDR4410
Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

PDF Datasheet
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FDR4410 Description
N-Channel Enhancement Mode Field Effect Transistor

April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOTTM-8 package is 40% smaller than the SO-8 package. The SuperSOTTM-8 advanced package design and optimized pinout allow the typical power dissipation to be similar to the bigger SO-8 package. Features 9.3 A, 30 V. RDS(ON) = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V. High density cell design

Fairchild Semiconductor
Fairchild Semiconductor



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